Influence of vacancies on indium atom distribution in InGaAs and InGaN compounds
نویسندگان
چکیده
منابع مشابه
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Spontaneous formation of indium-rich nanostructures on InGaN(0001) surfaces
InGaN(0001) surfaces prepared by molecular beam epitaxy have been studied using scanning tunneling microscopy and first-principles total energy calculations. Nanometer-size surface structures are observed consisting of either vacancy islands or ordered vacancy rows. The spontaneous formation of these structures is shown to be driven by significant strain in the surface layers and by the relativ...
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ژورنال
عنوان ژورنال: Lithuanian Journal of Physics
سال: 2015
ISSN: 1648-8504,1648-8504
DOI: 10.3952/physics.v55i1.3053